نتایج جستجو برای: Czochralski method

تعداد نتایج: 1630440  

2003
E. Tuominen

We have tested the detection performance of a strip detector processed on silicon wafer grown by magnetic Czochralski (MCZ) method. This is the first time a full size Czochralski detector has been tested in a beam, although the advantages of CZ silicon have been known before. Prior to test beam measurements, the electrical characteristics of the Czochralski silicon detectors were found to be ap...

Journal: :Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 2018

For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...

Journal: :Вестник Чувашского государственного педагогического университета им. И.Я. Яковлева. Серия: Механика предельного состояния 2020

2013
Parsa Rahmanpour John Atle Bones Morten Hovd Jan Tommy Gravdahl

The Czochralski process is the only method used commercially for production of monocrystalline silicon for semiconductor and solar cell applications. This paper explores the use of mathematical modeling as an aid in estimation of system state variables in the standard Czochralski process. A state-space model of the process is presented, describing the dynamics of the crystal radius and meniscus...

Journal: :CrystEngComm 2021

The feasibility to grow bulk La-GPS:Ce scintillation crystals by the Czochralski method using Mo crucibles has been reported.

2009
D. Klimm

The binary phase diagram CaF2–SrF2 was investigated by differential thermal analysis (DTA). Both substances show unlimited mutual solubility. An azeotropic point showing a minimum melting temperature of Tmin = 1373 C for the composition Ca0.582Sr0.418F2. Close to this composition, homogeneous single crystals up to 30mm diameter without remarkable segregation could be grown by the Czochralski me...

2000
JAN FRANCŮ

The Czochralski method of the industrial production of a silicon single crystal consists of pulling up the single crystal from the silicon melt. The flow of the melt during the production is called the Czochralski flow. The mathematical description of the flow consists of a coupled system of six P.D.E. in cylindrical coordinates containing Navier-Stokes equations (with the stream function), hea...

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